Experimental Physics IV

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  8. Magnetron sputter deposition system

Magnetron sputter deposition system

The sputter deposition system (450 Sputter System, Bestec GmbH) is equipped with eight tiltable sputter sources. The system can be used for depositing a wide range of dielectric and metallic (magnetic and non-magnetic) materials (2’’ targets). Theoretically, a co-deposition with up to two RF and six DC sources simultaneously is possible. Each source is equipped with a separate shutter, so the deposition of complex stack structures is possible. Currently available materials are:

 

Elemental materials: Ag, Al, Au, C, Co, Cr, Cu, Fe, Gd, Ge, Ir, Mg, Mn, Mo, Nb, Ni, Pd, Pt, Ru, Si, Ta, Tb, Ti, W, Y

Compounds: Co2Y, CoFeB, CoFe, CoCrPt, CoSi2, FePt, FeAl, MgO, MnGe, MnIr, NdFeB, NiFe, Si3N4, SiO2

 

The base pressure of the deposition chamber is 5∙10-9 mbar. Nitrogen and Argon are currently available sputter gases. The completely rotatable sample holder can be heated to a maximum temperature of 1100 °C and can hold samples of up to 4’’ diameter. The device is equipped with a load lock, consisting of a 5 slot sample magazine ensuring a high throughput with minimal contamination of the process chamber. The device is remotely controlled via a commercial software which is used for a completely automatized deposition process.

 

 

Fig.1 - CAD-image of the 450 Sputter System, Bestec GmbH
Fig. 2 - view inside the vacuum chamber with the 8 tiltable targets
Fig. 3 - shematic principle of the sputter sources
Fig. 4 - Schematic cutout of the target is showing sputtering and concomitant processes in the vicinity of its surface

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