Rapid Thermal Annealing (RTA)
Our Rapid Thermal Processor AST SHS 10MA allows rapid thermal annealing of wafers and thin film structures at temperatures up to 1000 °C.
By heating the samples for only a few seconds using high intensity halogen lamps grown films and interfaces can be changed and defects in crystal structure can be cured. Temperature treatment under non-oxidizing atmosphere as well as rapid thermal oxidation is possible.
![](https://assets.uni-augsburg.de/media/filer_public_thumbnails/filer_public/f0/64/f06493cc-54d5-40f7-93f4-e101644c87bc/rta.jpg__1080x2000_q85_subject_location-2293%2C1807_subsampling-2.jpg)
![](https://assets.uni-augsburg.de/media/filer_public_thumbnails/filer_public/b5/ce/b5ce9465-0b9a-4772-96ba-d233aaf27063/rta.png__1080x2000_q85_subject_location-960%2C544_subsampling-2.jpg)